Table of Contents

Overview
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LCD pixel circuits must maintain voltage between refresh cycles. The storage capacitor configuration significantly impacts display performance.

Basic Pixel Circuit
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Gate Line (Gi) ──┬──[TFT]──┬── Data Line (Dj)
                 │         │
                ═╪═       ═╪═
                ═╪═ Cst   ═╪═ Clc
                ═╪═       ═╪═
                 │         │
              Common ──────┘

Components
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ComponentFunction
TFTSwitch (on/off control)
ClcLiquid crystal capacitance
CstStorage capacitor

Storage Capacitor Configurations
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Configuration 1: Storage on Common (Cs on Com)
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Gate (Gi) ────[TFT]───┬──── Data (Dj)
                     ═╪═ Clc
                     ═╪═
                     ═╪═ Cst
                     ═╪═
                  Common (Vcom)

Characteristics:

  • Capacitor between pixel electrode and common line
  • Simpler structure
  • Independent of gate timing

Configuration 2: Storage on Gate (Cs on Gate)
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Gate (Gi) ────[TFT]───┬──── Data (Dj)
                     ═╪═ Clc
                     ═╪═
                     ═╪═ Cst
                     ═╪═
               Gate (Gi-1) ← Previous row

Characteristics:

  • Capacitor connected to previous row’s gate line
  • More compact design
  • Potential coupling effects

Voltage Coupling Issue
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Problem with Cs on Gate
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When data is written to row i:

  1. Gate line Gi is high (TFT on)
  2. Data voltage applied to pixel
  3. Storage capacitor couples to Gi-1

This can cause voltage fluctuations:

$$ \Delta V_{pixel} = \frac{C_{st}}{C_{st} + C_{lc}} \cdot \Delta V_{gate} $$

Impact on Previous Row
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The coupling may cause:

  • Slight gate voltage change on row i-1
  • Minimal TFT conduction if \(V_{gs}\) approaches threshold
  • Potential charge leakage

Why It’s Usually Acceptable
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  1. Timing window is short

    • Gate pulse duration: ~15 μs
    • Coupling effect brief
  2. Voltage change is small

    • Capacitive divider reduces effect
    • Typically < 0.1V change
  3. TFT threshold margin

    • Gate off voltage is well below threshold
    • Small perturbation doesn’t turn on TFT

TFT Leakage Considerations
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Off-State Leakage
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TFT gates cannot achieve perfect closure when \(V_{ds}\) exists:

$$ I_{off} = I_0 \cdot e^{(V_{gs} - V_{th})/S} $$

Where S is subthreshold slope.

Permissible Leakage
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The acceptable leakage current relates to perceptible luminance changes:

$$ \Delta V = \frac{I_{leak} \cdot t_{frame}}{C_{total}} $$

If \(\Delta V\) causes < 1% brightness change, it’s imperceptible.

Design Margins
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ParameterTypical Value
Off-state leakage< 1 pA
Frame time16.7 ms (60 Hz)
Storage capacitance0.3-0.5 pF
Acceptable ΔV< 50 mV

Capacitance Requirements
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Total Pixel Capacitance
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$$ C_{total} = C_{lc} + C_{st} + C_{parasitic} $$

Sizing Guidelines
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$$ C_{st} \approx (2-3) \times C_{lc} $$

Larger storage capacitor:

  • Better voltage retention
  • Reduced aperture ratio

Trade-offs
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Larger CstSmaller Cst
Better holdingMore droop
Slower chargingFaster charging
Lower apertureHigher aperture

Feedthrough Voltage
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Kickback Effect
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When gate turns off:

$$ \Delta V_{pixel} = \frac{C_{gs}}{C_{gs} + C_{lc} + C_{st}} \cdot \Delta V_{gate} $$

This shifts pixel voltage, requiring compensation.

Compensation Methods
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  1. Vcom adjustment: Shift common voltage
  2. Data adjustment: Pre-compensate data voltage
  3. Layout optimization: Minimize gate-source overlap

Advanced Pixel Designs
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Dual TFT
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Gate ────[TFT1]──┬──[TFT2]──── Data
                 Pixel

Reduces kickback and leakage.

Compensation Capacitor
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Additional capacitor for feedthrough correction:

         ┌─── Cst ───┐
Gate ─[TFT]─┤         ├─ Data
         └─── Clc ───┘
         └─── Cc ────┘ Compensation

Summary
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ConfigurationProsCons
Cs on ComNo coupling, simplerMore space needed
Cs on GateCompact, higher CstPotential coupling

Design choice depends on:

  • Display size and resolution
  • Manufacturing process
  • Performance requirements